Abstract
Nanoscale light-matter interaction in the weak-coupling regime has been achieved with unique hyperbolic metamaterial modes possessing a high density of states. Here, we show strong coupling between intersubband transitions (ISBTs) of a multiple quantum well (MQW) slab and the bulk polariton modes of a hyperbolic metamaterial (HMM). These HMM modes have large wave vectors (high-k modes) and are normally evanescent in conventional materials. We analyze a metal-dielectric practical multilayer HMM structure consisting of a highly doped semiconductor acting as a metallic layer and an active multiple quantum well dielectric slab. We observe delocalized metamaterial mode interaction with the active materials distributed throughout the structure. Strong coupling and characteristic anticrossing with a maximum Rabi splitting (RS) energy of up to 52 meV is predicted between the high-k mode of the HMM and the ISBT, a value approximately 10.5 times greater than the ISBT linewidth and 4.5 times greater than the material loss of the structure. The scalability and tunability of the RS energy in an active semiconductor metamaterial device have potential applications in quantum well infrared photodetectors and intersubband light-emitting devices.